inchange semiconductor product specification silicon npn power transistors 2SC2898 description ? ? with to-220c package ? high voltage,high speed ? high power switching pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 8 a i cm collector current-peak 16 a i b base current 4 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SC2898 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a; l=100mh 400 v v (br) ebo emitter-base breakdown voltage i e =10ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =4.0a; i b =0.8a(pulse test) 1.0 v v besat base-emitter saturation voltage i c =4.0a; i b =0.8a(pulse test) 1.5 v i cbo collector cut-off current v cb =400v; i e =0 50 | a i ceo collector cut-off current v ce =350v; r be = ?t 50 | a h fe-1 dc current gain i c =4a ; v ce =5v(pulse test) 15 h fe-2 dc current gain i c =8a ; v ce =5v(pulse test) 7 switching times t on turn-on time 0.8 | s t s storage time 2.0 | s t f fall time i c =8a, i b1 =-i b2 =1.6a v cc ?? 150v 0.8 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SC2898 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2SC2898
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